A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally,  The high-frequency LLC resonant converter is completed.

The high power converter system constructed with wide bandgap (GaN HEMT) is currently tested to 1 MHz/1000 W with a power density of 38 W/cm3a conversion efficiency of 97. The technology starts from the 6-inch wafer to the system application including the optimization of 6-inch GaN epitaxy. E/D-mode HEMT fabrication,Low-side GaN HEMT logic gate ( 2MHz) for integrated circuit design.

Industrial applicability can be applied by the most upstream epitaxial technology, the midstream process technologycomponent model,the final converter/converter circuit (transformer). It is in line with Taiwan＇s semiconductor industry＇s additional GaN options in Silicon.