| Technical Name |
Panchromatic CMOS TDI Image Sensor Design for Remote Sensing Satellite |
| Project Operator |
Taiwan Semiconductor Research Center, National Applied Research Laboratories |
| Project Host |
張大強 |
| Summary |
This project developed a CMOS Image Sensor (CIS) for the 2nd generation remote sensing satellite,its main achievement is to improve the ground resolution (also known as the Ground Sampling Distance, GSD) from 2 meters to sub-meter. The 12-cm large size chip of CMOS image sensor is implemented using Back-Side Illumination (BSI) CIS technology with mask stitching technologyutilizing the CMOS Time Delay Integration (CMOS TDI) technology in this design.
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| Scientific Breakthrough |
In addition to collecting geographic information through remote sensing satellite, this image sensor technology can be applied to any image sensor of remote sensing payload, such as unmanned aerial vehiclespace telescope. And it will be useful to provide high resolution image data for disaster prevention, ecological investigation, environment protectionspace observation.
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| Industrial Applicability |
In addition to collecting geographic information through remote sensing satellite, this image sensor technology can be applied to any image sensor of remote sensing payload, such as unmanned aerial vehiclespace telescope. And it will be useful to provide high resolution image data for disaster prevention, ecological investigation, environment protectionspace observation.
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| Keyword |
Complementary Metal-Oxide-Semiconductor Image Sensor Time Delay Integration Technology Mask Stitching Low Voltage Differential Signaling Transmission . . . . . |
