The Micro-Detector Array (MDA) aims to monitor the uniformity of dosage in various processes, including EUV, DUV, e-Beam, and Ion-Beam. The MDA is capable to measure critical dimensions, image log slope, and pattern edge location. Meanwhile, MDA is fully compatible with logic process, which provides advantages of high contrast in intensity, wide dynamic range, built-in calibration, and instant WAT analysis. These features enable the MDA to monitor process parameter variation.

Micro-Detector Array (MDA) can monitor the uniformity of dosage, critical dimensions, image log slope, and pattern edge location. MDA is fully compatible with the FinFET logic process, providing high contrast in intensity, wide dynamic range, built-in calibration, and instant WAT analysis.

The MDA is able to measure critical information for optimizing FinFET lithography beyond 5nm. It is expected to be integrated into the detection modules of EUV scanner equipment, such as ASML, and enhance the accuracy and reliability of lithography processes. The real-time monitoring of EUV intensity inside vacuum chambers and wireless signal transmission allow corrective measures to be taken immediately.