We have developed several world＇s first novel process technologies such as local oxidation of SiC isolation, buried junction isolation, dual-gate oxide, P-type polysilicon gate, etc., to achieve single-chip integration of logic circuits, driver circuits,vertical power MOSFET,successfully demonstrate a variety of logic gatescircuits, with substrate voltages from 0 V to 600 V,normal operation from room temperature to 200 ℃. The unique process technologiesthe completeness of circuit integration are superior to international precedents,are an important breakthrough for smart power modules.

We have developed several world＇s first novel process technologies such as local oxidation of SiC isolation, buried junction isolation, dual-gate oxide, P-type polysilicon gate, etc., with the optimization of other processes, to achieve single-chip integration of SiC CMOSpower MOSFET.

寬能隙半導體元件，特別是碳化矽製作之元件，可以應用於高電壓、大電流、高溫度、強輻射的環境，例如能源網路、軌道運輸、新能源汽車、航太產業等。本技術的目的在提升碳化矽元件與功率模組的效能，因此凡是上述碳化矽功率元件的應用，均可能透過本技術獲得改善