"Developed a ferroelectric oxide (HZO) gate for gallium nitride transistor, resulting in high breakdown, high current densityhigh threshold voltage. Best Figure of Merit Performance in the world.
Using unique stepper double exposure technology to produce ultra-small linewidth GaN transistors for high-frequency application with Ft300GHz, one of the leading team in the world
This technology uses frequency resonance, class E amplifiershigh-frequency rectifier circuits to achieve one-to-many non-contact fast charging.  Best in the society for wireless fast chargingmodules."

"1.	Develop Enhancement mode GaN power trnasistors with ferroelectric layer, electron capturetunneling layer to form the gate stack, the best FOM for E mode GaN HEMT.
2.	Develop GaN high frequency devices with Ft higher than 300 GHz. Using steppertwo-stage exposure technology to fabricate 100 nm GaN device with output power 10 watts at Ka band with power densityhigher than 2W/mm (75 GHz).
3.	Develop GaN High-efficiency wireless fast charging modules with 6.78MHz resonant inductive coupling. The charging distance more than 10 cm "one-to-many" charging. Efficiency is over 95."

"(1). Energy conversioncharging for Electric vehicles , data centers solar cells all require power conversion electronic components. GaN is the new generation of power electronics.
(2). 5G, satellite communication, Internet of Thingsbig data, artificial intelligenceautomation are developing rapidly. GaN is the only semiconductor technology has high efficiecncy at Ka band.
(3). The demands for Wireless charging including smartphones, wearable devices,notebook, multi-axis aircraft, robots, medical devices are growing rapidly. The market will reach 15 billion USD in 2024."

天使投資人、策略合作夥伴