We propose advanced nitrogen-based passivation techniques, including plasma-enhanced atomic layer deposition (PEALD) aluminum nitride (AlN)in-situ remote-plasma (RP) treatment using nitrogen (N2) gas,demonstrate the high-performancesufficiently reliable In0.53Ga0.47As FinFETs for radio frequency (RF) applications.

InGaAs materials are suitable for RF applications, enabling high-frequencylow-noise functionality. However, InGaAs FinFETs inherit low quality of InGaAs surface/interface of fin structures. in this work, we propose an advanced nitrogen-based plasma treatmentsdemonstrate high-performance InGaAs FinFET technology enabling the scaled devices matching the requirements of high-frequency RF ap

These InGaAs FinFET technologies with high frequency response can be used for next-generation network systems, communications,aerospace (with frequency signal between 100-340 GHz).  It can be integrate with the state-of-the-art Si CMOS used for many THz imaging applications such as medical diagnostic, health treatment, security,sensor systems.