| Technical Name | External Field-Free Spin-Orbit Torque Magnetic Random Access Memory | ||
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| Project Operator | National Tsing Hua University | ||
| Project Host | 賴志煌 | ||
| Summary | STT-MRAM: scaling down (submicron scale) along with issues of magnetic propertyintegration with semiconductor processing. SOT-MRAM: fundamental understanding on mechanism, integration with STT-MRAMCMOS for readout. VCMA-MRAM: understand the mechanism behind the observable VCMA phenomenon, integration with other RAMs for write/read. |
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| Scientific Breakthrough | 50 nm STT-MRAM on 28nm CMOS has been done with thermal stability above 350 ℃. 8x8 STT-MRAM arrays with independent write/read capability. Micromagnetic simulation for boosting the switching efficiency. Failure analysis for increasing the life of device. New SOT-MRAM system based on antiferromagnet with higher magnetic stability. |
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| Industrial Applicability | For the purpose of low-power consumption, intelligent,novel sensing, spintronics-based MRAM definitely plays an important role. This proposal aims at integrating all the research resources regarding MRAMencouraging the research group devoting to studying MRAM-correlated projects. An advanced platform for MRAM processing, analysis,design will be developed. |
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| Keyword | MRAM Spin-transfer torque Spin-orbit torque Voltage control magnetic anisotropy Magnetic tunneling junction Perpendicular magnetic anisotropy Tunneling magneto-resistance Tilted IBE Complementary Metal-Oxide-Semiconductor Memory | ||
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