A wavelength tunable micro-light-emitting diodes fabricated by the nanometer-level etching technology, the strain-induced engineering can effectively shift the emission wavelength from green to blue. Meanwhile, we introduced the ALD for the passivation layer,the super inkjet printing system used to form the color-conversion layer to emissive red light. Finally, a hybrid type full-color micro-LED has been fabricated with the monolithic epitaxial wafer.

1.	Monolithic micro-LED RGB full-color pixel array.
2.	Enhanced photoluminescence intensity by 140 through ALD passivation.
3.	Quantum dots printing technology with excellent uniformity, ultra-narrow line width ( 2um).
4.	A wide color gamut determined by the overlap area of NTSCRec. 2020 is approximately 10578 that sufficient to support full-color performance in display technology.

1.	Reduced the number of mass transfer, improving the process yieldthroughput by monolithic RGB micro-LED.
2.	Micro-LED can be widely applied to various type of displaysVLC application.
3.	Some traditional semiconductor process can be replaced by high precision printing technology.
4.	Atomic layer deposition is a promising method to improve the performance of III-V semiconductor.