The growth of III-V nanowires is along the 111 directions of Si substrates when they are directly grown on Si substrate. When the orientation of Si is not (111), the nanowires cannot be vertically grown on Si. However, with a graphene intermediate layer bonded on Si with any orientation, nanowires can be grown vertically. Because of the 2D lattice structure of graphene, the III-V nanowires

-

-