The low-temperature defect passivation technology developed by our team can effectively eliminate defects in materials under 250°C, and leads to the improvement of the performance and reliability of devices. The technology has demonstrated the significant performance improvement when applying on GaN-based devices. After the treatment, the conducting current of FET devices is increased with the same operation condition. Moreover, in terms of LED devices, the emission efficiency was enhanced and the forward operating voltage decreased as well.

Develop a SiC single-chip power system platform across processes, devices,circuits to breakthrough the temperaturepower constraints of Si applications. The research includes low-voltage CMOS logic circuits, high-voltage driver circuits,vertical super-junction MOSFETs. All specifications exceed existing technology. The results can be applied to energy networks, rail transit, new energy vehicles, geological exploration, aerospace, defenseother fields.