Devices with physical flexibilitystretchability have attracted a great deal of interest for use in wearable electronic technologylarge-area electronics, including displays, energy harvesters, energy storage devices, distributed sensor networks,Internet of Things applications. The present invention relates to methods for growingtransferring single-crystal III-nitride nanorodstwo dimensional transition metal dichalcogenides (2D TMDs) nanostructures,devices having the transferred nanostructures for flexible device, microLED,3DIC fabrications.

ULF Raman spectroscopy utilizes novel VHG filters to spectrally clean up the laser line before ULF Raman spectroscopy is measured with a single grating spectrometer in conjunction with CCD camera. The availabilityaccessibility of UFL Raman spectroscopy opens new opportunity to reveal key information such as intermolecular structure characterization, pharmaceutical polymorph identification,material phaseinterfacial structure determination.