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    • 雙重增強表面增強拉曼散射感測器的超靈敏和快速檢測COVID-19 病毒

      FutureTech 雙重增強表面增強拉曼散射感測器的超靈敏和快速檢測COVID-19 病毒

      PCR, a gold-standard diagnostic method, were labor-intensive, time-consuming,costly, which restricted its application to widespread screening. Herein, this study purposes a one-potnon-washing method to rapidly detect virus by dual-SERS mechanism. COVID Antigens were captured by SERS nanoparticlesnovel SERS substrate simultaneously to achieve 6 order enhancements within 20 minutes. The dual-SERS sensors have reached a detection limit of 1 ng/ml in clinical samples for recognizing nucleocapsid & Spike proteins of COVID-19, which is comparable with PCR results.
    • 高質化石墨烯晶圓於下世代半導體之磊晶應用

      FutureTech 高質化石墨烯晶圓於下世代半導體之磊晶應用

      In this technique, it can synthesize high-qualitylarge area graphene. We develop batch to batch chemical vapor deposition (B2B-CVD) to reduce the cost to facilitate the industrialized production. At the same time, the development of high-quality six-inch graphene silicon wafers was made with our unique transferring process. The wafer can be used as epitaxial substrates, which can solve the bottleneck of poor heat dissipation of sapphire substrates, lattice mismatch of Si substrates,expensive SiCGaN substrates.
    • Balanced bandpass filter design using the folded substrate integrated waveguide

      Electronic & Optoelectronics Innotech Expo Balanced bandpass filter design using the folded substrate integrated waveguide

      A novel balanced BPF using the folded half-mode substrate integrated waveguide has a central frequency of 4.65 GHz with 0.55 GHz BWin-band insertion loss of 2.2 dB. The size of an FHMSIW is about 1/4 of the substrate integrated waveguide (SIW). The common-mode rejection levels are greater than 40 dB over a wide frequency range.
    • 成長於低阻SiC基板上之常關型p-GaN HEMT利用AlGaN cap層實現高閘極可靠度表現

      FutureTech 成長於低阻SiC基板上之常關型p-GaN HEMT利用AlGaN cap層實現高閘極可靠度表現

      We grew p-GaN HEMT on a low-resistance SiC substrateadded a AlGaN cap layer above the p-GaN layer. We use the wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injectionachieve the purpose of improving the gate reliability. In addition, we chose a zero-degree anglelow-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost.
    • 微電漿系統製程三維孔洞奈米材於紙基材應用於高產氫、高靈敏性拉曼、高催化

      FutureTech 微電漿系統製程三維孔洞奈米材於紙基材應用於高產氫、高靈敏性拉曼、高催化

      Here we developed a fastgreen process of micro-plasma system for three-dimensional porous nanomaterials on low-cost paper substrates. The characteristics are low-cost, flexible,high-stability. It has three major applications, including increasing Raman measument, the detection process can be used with portable Raman spectroscopy for fast sensing,it can quickly analyze pesticides, food, drugs, etc. In addition, it can be equipped with boron nitride for high hydrogen productionhigh pollution biodegradationother applications.
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