The technology combines specific visual recognitionelectrochemical quantitative detection in a single portable device, providing instantconvenient copper ion detection. The sensing sensitivity has reached the standards of Taiwanthe United States for heavy metal detection for food, human body,environments. In use, this portableuser-friendly interface device not only makes it simple to report back to the EPA database for water quality analysis, but also it can be utilized for real-time detection from youngsters to the elderly.

The low-temperature defect passivation technology developed by our team can effectively eliminate defects in materials under 250°C, and leads to the improvement of the performance and reliability of devices. The technology has demonstrated the significant performance improvement when applying on GaN-based devices. After the treatment, the conducting current of FET devices is increased with the same operation condition. Moreover, in terms of LED devices, the emission efficiency was enhanced and the forward operating voltage decreased as well.

We grew p-GaN HEMT on a low-resistance SiC substrateadded a AlGaN cap layer above the p-GaN layer. We use the wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injectionachieve the purpose of improving the gate reliability. In addition, we chose a zero-degree anglelow-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost.