A wavelength tunable micro-light-emitting diodes fabricated by the nanometer-level etching technology, the strain-induced engineering can effectively shift the emission wavelength from green to blue. Meanwhile, we introduced the ALD for the passivation layer,the super inkjet printing system used to form the color-conversion layer to emissive red light. Finally, a hybrid type full-color micro-LED has been fabricated with the monolithic epitaxial wafer.

We grew p-GaN HEMT on a low-resistance SiC substrateadded a AlGaN cap layer above the p-GaN layer. We use the wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injectionachieve the purpose of improving the gate reliability. In addition, we chose a zero-degree anglelow-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost.

"Developed a ferroelectric oxide (HZO) gate for gallium nitride transistor, resulting in high breakdown, high current densityhigh threshold voltage. Best Figure of Merit Performance in the world. Using unique stepper double exposure technology to produce ultra-small linewidth GaN transistors for high-frequency application with Ft300GHz, one of the leading team in the world This technology uses frequency resonance, class E amplifiershigh-frequency rectifier circuits to achieve one-to-many non-contact fast charging. Best in the society for wireless fast chargingmodules."