Superconducting qubit is the basic structure for constructing the quantum computer in the current approach. The superconducting-quantum-bit simulation chips (SC-qubit chip) that consist of 1-4 qubits are manufactured locally by domestic researchers. The SC-qubit chip is designed for simulation of artificial atoms, their mutual interactionstheir interactions with microwavesvacuum fluctuations.

A huge microwave power/RF power, which is generated by reasonable number super-imposition of smaller-power solid-state power sources, becomes a future trend. To meet the trend, NSRRC has developed a technology to combines multiple kilowatt-level RF power sources to tens of kilowatts to replace the vacuum tube that needs a high-voltage power supplybecome moremore expensive.

"The team established material doping technology to greatly improve the piezoelectric properties of lead-free materials,successfully prepared MEMS lead-free triaxial piezoelectric accelerometers. The use of lead-free materials is the world＇s first development result. In addition, the team also integrated sensors, back-end circuitsuser interfaces, applied the acceleration gauge system to the safety monitoring of unmanned vehicles,successfully integrated the intelligent integrated sensingcontrol system required in the Internet of Things era."

We have developed a movement assistive system using EEG-controlled functional electric stimulation system. Users’ movement intentions are recognized by brain computer interface, implemented by deep learning network,the detected users’ intentions are then translated into commands to trigger a functional electric stimulation (FES) device to activate users’ particular movements, such as grasping, hand raising, holding a cup, etc. In our study, we have designed our own wireless dry-electrode EEG systemour own FES system.

"Developed a ferroelectric oxide (HZO) gate for gallium nitride transistor, resulting in high breakdown, high current densityhigh threshold voltage. Best Figure of Merit Performance in the world. Using unique stepper double exposure technology to produce ultra-small linewidth GaN transistors for high-frequency application with Ft300GHz, one of the leading team in the world This technology uses frequency resonance, class E amplifiershigh-frequency rectifier circuits to achieve one-to-many non-contact fast charging. Best in the society for wireless fast chargingmodules."