We grew p-GaN HEMT on a low-resistance SiC substrateadded a AlGaN cap layer above the p-GaN layer. We use the wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injectionachieve the purpose of improving the gate reliability. In addition, we chose a zero-degree anglelow-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost.

Our technology uses GaN (gallium nitride)SiC (silicon carbide) wide band gap semiconductor materials to develop high radiation hardness semiconductor technologies for space applications. GaNSiC-based materials feature with a strong bondingsmall lattice constant. Furthermore, the displacement energy of GaNSiC-based materials is greater than 10 times that of silicon. Therefore, GaNSiC-based device can exhibit a better radiation hardness than the Si-based devices, indicating that GaNSiC-based electronics are promising for the space applications.

Supramolecular nanoparticles is a convenient, flexible,modular synthetic non-viral gene delivery vehicle for drug/gene delivery. The self-assembly of SMNPs is enabled upon mixing three different molecular building blocks, namely CD-PEI, Ad-PAMAM,Ad-PEG via Ad/CD motif-based molecular recognition. This allows modular control over the sizes, surface chemistry,payloads of SMNP vectors, thus holding promise for diverse therapeutic applications, especially for developing nanoparticle-based gene delivery platforms.

The research topics include advanced power supply, energy storage techniques, electromechanical integration, electric vehicles,power system control. Based on the existing researchdevelopment foundation, focusing on energy conversion efficiency, high-voltage charging (fast charging), device miniaturizationlight weight, smart power management solutions, etc., with lightweight materials. Develop a power management solution to instantly monitor the power statuscharging device. The application of management to achieve the vision of a smart city.

The low-temperature defect passivation technology developed by our team can effectively eliminate defects in materials under 250°C, and leads to the improvement of the performance and reliability of devices. The technology has demonstrated the significant performance improvement when applying on GaN-based devices. After the treatment, the conducting current of FET devices is increased with the same operation condition. Moreover, in terms of LED devices, the emission efficiency was enhanced and the forward operating voltage decreased as well.

Develop a SiC single-chip power system platform across processes, devices,circuits to breakthrough the temperaturepower constraints of Si applications. The research includes low-voltage CMOS logic circuits, high-voltage driver circuits,vertical super-junction MOSFETs. All specifications exceed existing technology. The results can be applied to energy networks, rail transit, new energy vehicles, geological exploration, aerospace, defenseother fields.