This technology develop a “Thermoelectric Ever-Charge Portable Charger” for the applications in auxiliary charging of consumer electronicsfast self-charging for outdoor sensors. Technically, a sputtering depositiona semiconductor photolithography technique are combined to fabricate p-n materialsconnection procedures. The thermoelectric performance of the device is further optimized through a low-temperature heat treatment.

The low-temperature defect passivation technology developed by our team can effectively eliminate defects in materials under 250°C, and leads to the improvement of the performance and reliability of devices. The technology has demonstrated the significant performance improvement when applying on GaN-based devices. After the treatment, the conducting current of FET devices is increased with the same operation condition. Moreover, in terms of LED devices, the emission efficiency was enhanced and the forward operating voltage decreased as well.

In this technique, it can synthesize high-qualitylarge area graphene. We develop batch to batch chemical vapor deposition (B2B-CVD) to reduce the cost to facilitate the industrialized production. At the same time, the development of high-quality six-inch graphene silicon wafers was made with our unique transferring process. The wafer can be used as epitaxial substrates, which can solve the bottleneck of poor heat dissipation of sapphire substrates, lattice mismatch of Si substrates,expensive SiCGaN substrates.

Our technology uses GaN (gallium nitride)SiC (silicon carbide) wide band gap semiconductor materials to develop high radiation hardness semiconductor technologies for space applications. GaNSiC-based materials feature with a strong bondingsmall lattice constant. Furthermore, the displacement energy of GaNSiC-based materials is greater than 10 times that of silicon. Therefore, GaNSiC-based device can exhibit a better radiation hardness than the Si-based devices, indicating that GaNSiC-based electronics are promising for the space applications.

The technology designs a modular friction stir welding tool holder. This welding tool holder integrates a variety of functions, including constant pressure welding, temperature monitoring, removable FSW tool design,can be clamped to an existing CNCmachine. The advantage is that it can realize the function of automatic exchange for friction stir weldingCNC milling in one machine. Breaking through the previous friction stir welding, you need to buy a friction stir welding machine, which is expensive to obtain.

This project developed a CMOS Image Sensor (CIS) for the 2nd generation remote sensing satellite,its main achievement is to improve the ground resolution (also known as the Ground Sampling Distance, GSD) from 2 meters to sub-meter. The 12-cm large size chip of CMOS image sensor is implemented using Back-Side Illumination (BSI) CIS technology with mask stitching technologyutilizing the CMOS Time Delay Integration (CMOS TDI) technology in this design.

A CMOS image sensor is developed for the national space organization (NSPO) 3rd generation high-resolution remote sensing satellite,the main achievement is its capability to satisfy the demanded ground resolution of 0.5 m. This CMOS image sensor with a new time delay integration circuit is implemented using Back-Side Illumination CIS 0.13 μm technology. The anti-radiation capability of the chip is also boosted to extend the lifetime of the chip. Measurement systemdata analysis programs are developed to provide performance parameters of the proposed CMOS image sensor.

ULF Raman spectroscopy utilizes novel VHG filters to spectrally clean up the laser line before ULF Raman spectroscopy is measured with a single grating spectrometer in conjunction with CCD camera. The availabilityaccessibility of UFL Raman spectroscopy opens new opportunity to reveal key information such as intermolecular structure characterization, pharmaceutical polymorph identification,material phaseinterfacial structure determination.

This project is used for advanced driver assistance systems (ADAS)automatic driving. At present, our project will use a more sensitive CMOS single photon detector array to reduce the number of photons required for detection to less than ten, in order to break through the cost barriers of applications of LiDARestablish low-cost, high-performance LiDAR modules.

By combining the thermal evaporation and spin-coating techniques, we are able to demonstrate synthesis of 3 cm x 3 cm and 1.5 cm x 1.5 cm organometallic halide perovskite light-emitting diodes with electroluminescence at 538 nm and 405 nm, respectively. Other than the advantage in large device area, to our best knowledge, the demonstrated violet LEDs have produced the shortest emission wavelength available from current hybrid perovskites. The luminance of our green LEDs reach a maximum value of 9967 cd/m2 with an EQE of 0.88% and color purity of 95%. Moreover, it is possible to generate white light emission by combining the violet perovskite LEDs with visible light phosphor.

Responding the government’s policy of “circular economy”. The project is to manufacture high value and energy saving construction material (lightweight aggregate) by using Taiwan environmental and industrial waste, such as paper sludge, textile sludge, organic waste solvent from semiconductor industry, and reservoir sludge, etc. Based on fully recyclable concept to create real benefits for domestic ecological environment.

Develop a SiC single-chip power system platform across processes, devices,circuits to breakthrough the temperaturepower constraints of Si applications. The research includes low-voltage CMOS logic circuits, high-voltage driver circuits,vertical super-junction MOSFETs. All specifications exceed existing technology. The results can be applied to energy networks, rail transit, new energy vehicles, geological exploration, aerospace, defenseother fields.

Our technology combines optimized semiconductor manufacturing technique with unique biomediator preparation to achieve the first reliable POC biosensing platform. Sensors developed according to this method possess reproducibility, accuracy,stability that meet POC. Our sensors are portable, require low sample volume, do not require sample processing,are extremely suitable for use in POC settings. They can also be integrated into IoT systems to aide in rapid decision making,can be mass produced. Overall, we are the first to achieve accessible, reliable detection at the POC.

A technique compatible to IC process has been presented to prepare gas sensing chips the lightly-doped region of nanoelectronic devices are grown with different sensing materials to form a gas sensor array. During gas sensing, individual nanodevice was Joule-heated, reducing power consumption to microWatts/device, solving the current high power consumption problem. With self-calibration of temperature, humidityinterfering gas, problems like cross-sensitivity, quantification, specificitysensitivity are solved. A demonstration of I+Nose with smart phone was presented for CO detection.

We proposedshowed the ferroelectric materials served as a prospective substrate to support TMD to achieve a pn homojunction, as the accumulationdepletion of an inevitably charged mobile carrier occurs in the TMD to screen the polarization field of the FE substrate. This work provides a non-volatile control of TMD dopinga promising way to produce a pn homojunction as a future building block of 2D device applications.

The organic layerorganic-inorganic multi-layers deposited on the packaging substrate to achieve the ultra-high water barrier performance, lower than 10e-5 (g/m2/day). This technology can apply to all flexable electronic devices. The fabrication in this team evolved from batch-to-batch process in the 1st year to tray-to-tray process in the 3rd year. The roll-to-roll wet processin-line dry process are constructed in the 5th yearready for commercialization.

We based on ion trap for mass filter so that ultra-high vacuum is not needed to reduce the weightsize. We took frequency scanning to increase our mass range by 10,000,000,000. We used LED as LC detector to reduce sizecost. Therefore, we not only made a portable device but also a device with many special advantages in technology. An advanced analytical lab can become mobile to easily reach anywhere which needs in-situreal-time analysis by our inventions.

STT-MRAM: scaling down (submicron scale) along with issues of magnetic propertyintegration with semiconductor processing. SOT-MRAM: fundamental understanding on mechanism, integration with STT-MRAMCMOS for readout. VCMA-MRAM: understand the mechanism behind the observable VCMA phenomenon, integration with other RAMs for write/read.

A novel 3D-stack LTPO-based display array technology with CBRAM-embedded in a pixel has been successfully developed for the high-resolutionpower-saving near-eye VR/AR displays. Besides, a high-voltage gain CMOS inverter comprised by LTPO architecture is demonstrated acting as a digital driving circuit for the realistic FPD applications.