"Developed a ferroelectric oxide (HZO) gate for gallium nitride transistor, resulting in high breakdown, high current densityhigh threshold voltage. Best Figure of Merit Performance in the world. Using unique stepper double exposure technology to produce ultra-small linewidth GaN transistors for high-frequency application with Ft300GHz, one of the leading team in the world This technology uses frequency resonance, class E amplifiershigh-frequency rectifier circuits to achieve one-to-many non-contact fast charging. Best in the society for wireless fast chargingmodules."