A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally, The high-frequency LLC resonant converter is completed.

The low-temperature defect passivation technology developed by our team can effectively eliminate defects in materials under 250°C, and leads to the improvement of the performance and reliability of devices. The technology has demonstrated the significant performance improvement when applying on GaN-based devices. After the treatment, the conducting current of FET devices is increased with the same operation condition. Moreover, in terms of LED devices, the emission efficiency was enhanced and the forward operating voltage decreased as well.