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    • MethodStructure of stacking 3D-IC Employing Controlled-Grain Semiconductor Film

      Electronic & Optoelectronics FutureTech MethodStructure of stacking 3D-IC Employing Controlled-Grain Semiconductor Film

      The location of controlled-grain Si island is determined by the pattern of “cooling holes”. The grain size is determined by the distance between “holes” due to lateral grain growth using pulse laser crystallization. This predictability allows the transistorscircuits to stay away from the grain boundaries for monolithic
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