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Technical category
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    • 高質化石墨烯晶圓於下世代半導體之磊晶應用

      FutureTech 高質化石墨烯晶圓於下世代半導體之磊晶應用

      In this technique, it can synthesize high-qualitylarge area graphene. We develop batch to batch chemical vapor deposition (B2B-CVD) to reduce the cost to facilitate the industrialized production. At the same time, the development of high-quality six-inch graphene silicon wafers was made with our unique transferring process. The wafer can be used as epitaxial substrates, which can solve the bottleneck of poor heat dissipation of sapphire substrates, lattice mismatch of Si substrates,expensive SiCGaN substrates.
    • 應用第三代半導體之高功率密度先進電源

      FutureTech 應用第三代半導體之高功率密度先進電源

      The research topics include advanced power supply, energy storage techniques, electromechanical integration, electric vehicles,power system control. Based on the existing researchdevelopment foundation, focusing on energy conversion efficiency, high-voltage charging (fast charging), device miniaturizationlight weight, smart power management solutions, etc., with lightweight materials. Develop a power management solution to instantly monitor the power statuscharging device. The application of management to achieve the vision of a smart city.
    • Platform for SiC Power System on a Chip

      Electronic & Optoelectronics FutureTech Platform for SiC Power System on a Chip

      Develop a SiC single-chip power system platform across processes, devices,circuits to breakthrough the temperaturepower constraints of Si applications. The research includes low-voltage CMOS logic circuits, high-voltage driver circuits,vertical super-junction MOSFETs. All specifications exceed existing technology. The results can be applied to energy networks, rail transit, new energy vehicles, geological exploration, aerospace, defenseother fields.
    • 新型高頻、高功率氮化鎵電晶體技術

      FutureTech 新型高頻、高功率氮化鎵電晶體技術

      "Developed a ferroelectric oxide (HZO) gate for gallium nitride transistor, resulting in high breakdown, high current densityhigh threshold voltage. Best Figure of Merit Performance in the world. Using unique stepper double exposure technology to produce ultra-small linewidth GaN transistors for high-frequency application with Ft300GHz, one of the leading team in the world This technology uses frequency resonance, class E amplifiershigh-frequency rectifier circuits to achieve one-to-many non-contact fast charging. Best in the society for wireless fast chargingmodules."
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