Develop a SiC single-chip power system platform across processes, devices,circuits to breakthrough the temperaturepower constraints of Si applications. The research includes low-voltage CMOS logic circuits, high-voltage driver circuits,vertical super-junction MOSFETs. All specifications exceed existing technology. The results can be applied to energy networks, rail transit, new energy vehicles, geological exploration, aerospace, defenseother fields.

A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally, The high-frequency LLC resonant converter is completed.