In this technique, it can synthesize high-qualitylarge area graphene. We develop batch to batch chemical vapor deposition (B2B-CVD) to reduce the cost to facilitate the industrialized production. At the same time, the development of high-quality six-inch graphene silicon wafers was made with our unique transferring process. The wafer can be used as epitaxial substrates, which can solve the bottleneck of poor heat dissipation of sapphire substrates, lattice mismatch of Si substrates,expensive SiCGaN substrates.

With rapid evolution of Moores lawsemiconductor technology nodes down to sub-10 nm, advanced devicematerial technologies capable of Å accuracy are highly demanded. Thus we developed atomic layer technologies including atomic layer deposition, atomic layer annealing, atomic layer epitaxy,atomic layer etching, etc. for extreme control of materialsstructures with Å precision.

A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally, The high-frequency LLC resonant converter is completed.