Our technology uses GaN (gallium nitride)SiC (silicon carbide) wide band gap semiconductor materials to develop high radiation hardness semiconductor technologies for space applications. GaNSiC-based materials feature with a strong bondingsmall lattice constant. Furthermore, the displacement energy of GaNSiC-based materials is greater than 10 times that of silicon. Therefore, GaNSiC-based device can exhibit a better radiation hardness than the Si-based devices, indicating that GaNSiC-based electronics are promising for the space applications.

The research topics include advanced power supply, energy storage techniques, electromechanical integration, electric vehicles,power system control. Based on the existing researchdevelopment foundation, focusing on energy conversion efficiency, high-voltage charging (fast charging), device miniaturizationlight weight, smart power management solutions, etc., with lightweight materials. Develop a power management solution to instantly monitor the power statuscharging device. The application of management to achieve the vision of a smart city.

Develop a SiC single-chip power system platform across processes, devices,circuits to breakthrough the temperaturepower constraints of Si applications. The research includes low-voltage CMOS logic circuits, high-voltage driver circuits,vertical super-junction MOSFETs. All specifications exceed existing technology. The results can be applied to energy networks, rail transit, new energy vehicles, geological exploration, aerospace, defenseother fields.