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Technical category
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    • 高解析度光學微影銀漿

      FutureTech 高解析度光學微影銀漿

      Current 5G communication devices have a huge demand in high resolutiondensity of metal conducting wires in electronics ( 40 μm line width/line spacing), which cannot be achieved by conventional screen printing (100 μm). Our group cooperated with Ample Technology to develop a new-generation silver conductive paste which enables photolithographyachieves outstanding line resolution (5 μm width/13 μm spacing). The paste is simple to useperforms comparable of those of major European, AmericanJapanese manufacturers.
    • 突破物聯網的最後一哩:無晶片射頻辨識

      Electronic & Optoelectronics FutureTech 突破物聯網的最後一哩:無晶片射頻辨識

      The major cost of conventional RFID tags comes from a microchip. To reduce the start-up cost, we develop a chipless RFID system that eliminates the use of the chip. This research organize the real-world issues of chipless RFID into four subjects, including the design of chipless tags, chipless RFID readers, reader signal processing,wireless propagation channel. We successfully integrate the four topics, developing a calibration-free, orientation-insensitive,high-capacity chipless RFID system with multi-tag detection capability.
    • Innovative Wireless PositioningTracking System

      Electronic & Optoelectronics FutureTech Innovative Wireless PositioningTracking System

      iTech has developed an Innovative Wireless Positioning&Tracking System. iShield can simultaneously detect drones & operators. iPosition tracks thousands of targets indoor. iFollow is an auto-following function for smart droids.
    • Coplanar-Waveguide Defected Ground Structure

      Electronic & Optoelectronics Innotech Expo Coplanar-Waveguide Defected Ground Structure

      A coplanar-waveguide defected ground structure is invented for signal filtering of communication systems. The performance of the coplanar-waveguide defected ground structure can be easily determined by the design of the simple ground defects. It demonstrates excellent passband stopband, leakage wave,slow wave characteristics.
    • 新型高頻、高功率氮化鎵電晶體技術

      FutureTech 新型高頻、高功率氮化鎵電晶體技術

      "Developed a ferroelectric oxide (HZO) gate for gallium nitride transistor, resulting in high breakdown, high current densityhigh threshold voltage. Best Figure of Merit Performance in the world. Using unique stepper double exposure technology to produce ultra-small linewidth GaN transistors for high-frequency application with Ft300GHz, one of the leading team in the world This technology uses frequency resonance, class E amplifiershigh-frequency rectifier circuits to achieve one-to-many non-contact fast charging. Best in the society for wireless fast chargingmodules."
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