"Developed a ferroelectric oxide (HZO) gate for gallium nitride transistor, resulting in high breakdown, high current densityhigh threshold voltage. Best Figure of Merit Performance in the world. Using unique stepper double exposure technology to produce ultra-small linewidth GaN transistors for high-frequency application with Ft300GHz, one of the leading team in the world This technology uses frequency resonance, class E amplifiershigh-frequency rectifier circuits to achieve one-to-many non-contact fast charging. Best in the society for wireless fast chargingmodules."

A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally, The high-frequency LLC resonant converter is completed.

Our technology uses GaN (gallium nitride)SiC (silicon carbide) wide band gap semiconductor materials to develop high radiation hardness semiconductor technologies for space applications. GaNSiC-based materials feature with a strong bondingsmall lattice constant. Furthermore, the displacement energy of GaNSiC-based materials is greater than 10 times that of silicon. Therefore, GaNSiC-based device can exhibit a better radiation hardness than the Si-based devices, indicating that GaNSiC-based electronics are promising for the space applications.

The research topics include advanced power supply, energy storage techniques, electromechanical integration, electric vehicles,power system control. Based on the existing researchdevelopment foundation, focusing on energy conversion efficiency, high-voltage charging (fast charging), device miniaturizationlight weight, smart power management solutions, etc., with lightweight materials. Develop a power management solution to instantly monitor the power statuscharging device. The application of management to achieve the vision of a smart city.

A wavelength tunable micro-light-emitting diodes fabricated by the nanometer-level etching technology, the strain-induced engineering can effectively shift the emission wavelength from green to blue. Meanwhile, we introduced the ALD for the passivation layer,the super inkjet printing system used to form the color-conversion layer to emissive red light. Finally, a hybrid type full-color micro-LED has been fabricated with the monolithic epitaxial wafer.

We grew p-GaN HEMT on a low-resistance SiC substrateadded a AlGaN cap layer above the p-GaN layer. We use the wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injectionachieve the purpose of improving the gate reliability. In addition, we chose a zero-degree anglelow-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost.