Inorganic porous nanofibers with surfaceinterface defects are prepared through humidity-controlled electrospinninghigh-temperature annealing technology. Under the irradiation of light sources of different wavelengths (380~780 nm), the bound electrons stored in the valence band can be excited to the conduction band to form free electrons on the surface of the material, generating different intensities of microcurrents, light sensitivitymicrocurrent changes. Because the "inorganic nanofiber" technology has high uniquenesshigh product compatibility, it can be applied to a wide range of markets.

Inorganic porous nanofibers with surfaceinterface defects are prepared through humidity-controlled electrospinninghigh-temperature annealing technology. Under the irradiation of light sources of different wavelengths (380~780 nm), the bound electrons stored in the valence band can be excited to the conduction band to form free electrons on the surface of the material, generating different intensities of microcurrents, light sensitivitymicrocurrent changes. Because the "inorganic nanofiber" technology has high uniquenesshigh product compatibility, it can be applied to a wide range of markets.

The low-temperature defect passivation technology developed by our team can effectively eliminate defects in materials under 250°C, and leads to the improvement of the performance and reliability of devices. The technology has demonstrated the significant performance improvement when applying on GaN-based devices. After the treatment, the conducting current of FET devices is increased with the same operation condition. Moreover, in terms of LED devices, the emission efficiency was enhanced and the forward operating voltage decreased as well.