Our technology uses GaN (gallium nitride)SiC (silicon carbide) wide band gap semiconductor materials to develop high radiation hardness semiconductor technologies for space applications. GaNSiC-based materials feature with a strong bondingsmall lattice constant. Furthermore, the displacement energy of GaNSiC-based materials is greater than 10 times that of silicon. Therefore, GaNSiC-based device can exhibit a better radiation hardness than the Si-based devices, indicating that GaNSiC-based electronics are promising for the space applications.

A CMOS image sensor is developed for the national space organization (NSPO) 3rd generation high-resolution remote sensing satellite,the main achievement is its capability to satisfy the demanded ground resolution of 0.5 m. This CMOS image sensor with a new time delay integration circuit is implemented using Back-Side Illumination CIS 0.13 μm technology. The anti-radiation capability of the chip is also boosted to extend the lifetime of the chip. Measurement systemdata analysis programs are developed to provide performance parameters of the proposed CMOS image sensor.