With rapid evolution of Moores lawsemiconductor technology nodes down to sub-10 nm, advanced devicematerial technologies capable of Å accuracy are highly demanded. Thus we developed atomic layer technologies including atomic layer deposition, atomic layer annealing, atomic layer epitaxy,atomic layer etching, etc. for extreme control of materialsstructures with Å precision.

A wavelength tunable micro-light-emitting diodes fabricated by the nanometer-level etching technology, the strain-induced engineering can effectively shift the emission wavelength from green to blue. Meanwhile, we introduced the ALD for the passivation layer,the super inkjet printing system used to form the color-conversion layer to emissive red light. Finally, a hybrid type full-color micro-LED has been fabricated with the monolithic epitaxial wafer.

A technique compatible to IC process has been presented to prepare gas sensing chips the lightly-doped region of nanoelectronic devices are grown with different sensing materials to form a gas sensor array. During gas sensing, individual nanodevice was Joule-heated, reducing power consumption to microWatts/device, solving the current high power consumption problem. With self-calibration of temperature, humidityinterfering gas, problems like cross-sensitivity, quantification, specificitysensitivity are solved. A demonstration of I+Nose with smart phone was presented for CO detection.