Based on the mass production technique to fabricate 2D materials developed by our group, efficient gas sensors against NOx with sensitivity of 100 ppb are successfully demonstrated. In comparison to international competitors, our products exhibit superior sensitivityselectivity. Furthermore, the technique would be extended to other 2D materials to fabricate various gas sensors against multiple target gases. The integration with internet of things would then open new feasibilities for early monitoring in environmental pollutionhuman safety.

Devices with physical flexibilitystretchability have attracted a great deal of interest for use in wearable electronic technologylarge-area electronics, including displays, energy harvesters, energy storage devices, distributed sensor networks,Internet of Things applications. The present invention relates to methods for growingtransferring single-crystal III-nitride nanorodstwo dimensional transition metal dichalcogenides (2D TMDs) nanostructures,devices having the transferred nanostructures for flexible device, microLED,3DIC fabrications.

ULF Raman spectroscopy utilizes novel VHG filters to spectrally clean up the laser line before ULF Raman spectroscopy is measured with a single grating spectrometer in conjunction with CCD camera. The availabilityaccessibility of UFL Raman spectroscopy opens new opportunity to reveal key information such as intermolecular structure characterization, pharmaceutical polymorph identification,material phaseinterfacial structure determination.

We proposedshowed the ferroelectric materials served as a prospective substrate to support TMD to achieve a pn homojunction, as the accumulationdepletion of an inevitably charged mobile carrier occurs in the TMD to screen the polarization field of the FE substrate. This work provides a non-volatile control of TMD dopinga promising way to produce a pn homojunction as a future building block of 2D device applications.