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Technical category
    • 用於光達系統擁有高單光子偵測效率和高飽和電流特性的雙層累增層設計累增崩潰光二極體

      FutureTech 用於光達系統擁有高單光子偵測效率和高飽和電流特性的雙層累增層設計累增崩潰光二極體

      In this work, we demonstrate a dual multiplication layers In0.52Al0.48As based avalanche photodiode, which is desired for ToF lidarFMCW lidar application due to its high performances in both Geiger modelinear mode operations. By combining the specially designed mesa shape with dual M-layer structure, we can achieve high single photon detection efficiencyneat temporal characteristic of 65ps . On the other hand, we can also achieve high gain-bandwidth product ,high saturation currenthigh photo-generated RF power under 0.9 Vbr at the same time.
    • QUANTUM DOTS DISPLAY DEVICE

      Electronic & Optoelectronics Innotech Expo QUANTUM DOTS DISPLAY DEVICE

      The present invention aims to develop of novel wavelength converting films with the composited perovskite quantum dots,facilitating the application of this technology for LED backlight module.We applying PQD on chip to the components of LED backlight modules. The PQD-LEDs that are used for the backlight transmitted through a color filter exhibit the ITU-R Recommendation BT.2020 approximately 90
    • Air-stable luminescent organic-inorganic perovskite nanocrystal-polymer composites

      Smart machinerynovel materials FutureTech Air-stable luminescent organic-inorganic perovskite nanocrystal-polymer composites

      The technology realizes a perovskite nanocrystal-polymer composite material, which has extremely high stability at room temperaturehigh temperature. It can be used for 3D printing, shaped into fluorescent microfilaments,can also be used for white light-emitting diodes. The application of this air-stabile perovskite nanocrystal-polymer composite material in the 3D printing industry, texti
    • 轉移奈米結構的方法及具有奈米結構的裝置

      Smart machinerynovel materials FutureTech 轉移奈米結構的方法及具有奈米結構的裝置

      Devices with physical flexibilitystretchability have attracted a great deal of interest for use in wearable electronic technologylarge-area electronics, including displays, energy harvesters, energy storage devices, distributed sensor networks,Internet of Things applications. The present invention relates to methods for growingtransferring single-crystal III-nitride nanorodstwo dimensional transition metal dichalcogenides (2D TMDs) nanostructures,devices having the transferred nanostructures for flexible device, microLED,3DIC fabrications.
    • Large-area provskite light emitting device with high color purity

      Electronic & Optoelectronics FutureTech Large-area provskite light emitting device with high color purity

      By combining the thermal evaporation and spin-coating techniques, we are able to demonstrate synthesis of 3 cm x 3 cm and 1.5 cm x 1.5 cm organometallic halide perovskite light-emitting diodes with electroluminescence at 538 nm and 405 nm, respectively. Other than the advantage in large device area, to our best knowledge, the demonstrated violet LEDs have produced the shortest emission wavelength available from current hybrid perovskites. The luminance of our green LEDs reach a maximum value of 9967 cd/m2 with an EQE of 0.88% and color purity of 95%. Moreover, it is possible to generate white light emission by combining the violet perovskite LEDs with visible light phosphor.
    • 具有頂級轉換效率之創新醫療雷射系統:用於眼部與皮膚疾病治療

      FutureTech 具有頂級轉換效率之創新醫療雷射系統:用於眼部與皮膚疾病治療

      We originally design a highly efficient NdYVO4/KGW Raman laser at 579.5 nm. The KGW crystal is specially coated to prevent the Stokes wave from propagating through the gain medium so as to minimize the cavity losses. Moreover, we explore a new output coupler with double-sided dichroic coating to exterminate the leakage power of the Stokes wave to lead to a remarkable improvement for the output efficiency. The maximum output power can be up to 10.5W at a pump power of 40W. The conversion efficiency of the diode pump light to yellow laser output can be increased to 26.3.
    • Monolithic hybrid type quantum dots micro-light-emitting diodes for the full-color pixel array

      Electronic & Optoelectronics FutureTech Monolithic hybrid type quantum dots micro-light-emitting diodes for the full-color pixel array

      A wavelength tunable micro-light-emitting diodes fabricated by the nanometer-level etching technology, the strain-induced engineering can effectively shift the emission wavelength from green to blue. Meanwhile, we introduced the ALD for the passivation layer,the super inkjet printing system used to form the color-conversion layer to emissive red light. Finally, a hybrid type full-color micro-LED has been fabricated with the monolithic epitaxial wafer.
    • GaN Based High-frequency High-efficiency Converter

      Electronic & Optoelectronics FutureTech GaN Based High-frequency High-efficiency Converter

      A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally, The high-frequency LLC resonant converter is completed.
    • Multifunctional liquid crystal smart cloud sensors

      AI & IOT Application FutureTech Multifunctional liquid crystal smart cloud sensors

      This technology is a new microarray chip sensing technology that integrates "organic light-emitting diodes", "liquid crystal chemical sensors" and "mobile communication system" into "multifunctional liquid crystal smart cloud sensors". The obtained signals are uploaded to the cloud for multi-dimensional analysis to achieve multiplex detection in one single sample. This sensor device is lightweight, low-cost, simple to operate, and the target-of-interest can be custom-made according to user needs.
    • 高解析度紫外光微型發光二極體顯示器

      FutureTech 高解析度紫外光微型發光二極體顯示器

      This demonstration presents an active-matrix, 1920x1080, 370 nm UV MicroLED display. There are 2,073,600 pixels fabricated on this display which is smaller than a dollar coin,its diagonal has an extremely high pixel density of 3200 pixels per inch (ppi). The size of each pixel is 5 μm in diameter,the pixel pitch is 8 μm. The key technology of this achievement lies in the fabrication of pixels with good characteristicshigh uniformity,the successful development of flip-chip technology combining MicroLEDdriving integrated circuit pixels. This result can display imagesvideos.
    • 原子厚度的二維半導體元件

      FutureTech 原子厚度的二維半導體元件

      We proposedshowed the ferroelectric materials served as a prospective substrate to support TMD to achieve a pn homojunction, as the accumulationdepletion of an inevitably charged mobile carrier occurs in the TMD to screen the polarization field of the FE substrate. This work provides a non-volatile control of TMD dopinga promising way to produce a pn homojunction as a future building block of 2D device applications.
    • 新世代太陽能電池之阻水氣封裝膜技術開發

      FutureTech 新世代太陽能電池之阻水氣封裝膜技術開發

      The organic layerorganic-inorganic multi-layers deposited on the packaging substrate to achieve the ultra-high water barrier performance, lower than 10e-5 (g/m2/day). This technology can apply to all flexable electronic devices. The fabrication in this team evolved from batch-to-batch process in the 1st year to tray-to-tray process in the 3rd year. The roll-to-roll wet processin-line dry process are constructed in the 5th yearready for commercialization.
    • 超高效率之三重態-三重態湮滅向上轉換深藍光有機元件

      FutureTech 超高效率之三重態-三重態湮滅向上轉換深藍光有機元件

      A new emission model of organic light-emitting diode (OLED) based on triplet-triplet annihilation upconversion (TTAUC) with a high intrinsic upconversion efficiency (86.1) by using tris-(8-hydroxyquinoline)aluminum (Alq3)9,10-Bis(2-naphthyl)anthracene (ADN) as green sensitizerblue emitter, respectively. This structure improved the device efficiencyoperation lifetime compared to the conventional TTA-OLEDs. A record-high efficiency of 15.4EQEa 1.5x lifetime performance comparing to the commercial blue OLED are obtained by utilizing the TTAUC mechanism.
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