進階篩選

Technical category
    • Application of inorganic nanofiber technology to promote the development of biotechnology

      Smart machinerynovel materials FutureTech Application of inorganic nanofiber technology to promote the development of biotechnology

      Inorganic porous nanofibers with surfaceinterface defects are prepared through humidity-controlled electrospinninghigh-temperature annealing technology. Under the irradiation of light sources of different wavelengths (380~780 nm), the bound electrons stored in the valence band can be excited to the conduction band to form free electrons on the surface of the material, generating different intensities of microcurrents, light sensitivitymicrocurrent changes. Because the "inorganic nanofiber" technology has high uniquenesshigh product compatibility, it can be applied to a wide range of markets.
    • (test)Application of inorganic nanofiber technology to promote the development of biotechnology

      Smart machinerynovel materials FutureTech (test)Application of inorganic nanofiber technology to promote the development of biotechnology

      Inorganic porous nanofibers with surfaceinterface defects are prepared through humidity-controlled electrospinninghigh-temperature annealing technology. Under the irradiation of light sources of different wavelengths (380~780 nm), the bound electrons stored in the valence band can be excited to the conduction band to form free electrons on the surface of the material, generating different intensities of microcurrents, light sensitivitymicrocurrent changes. Because the "inorganic nanofiber" technology has high uniquenesshigh product compatibility, it can be applied to a wide range of markets.
    • GaN Based High-frequency High-efficiency Converter

      Electronic & Optoelectronics FutureTech GaN Based High-frequency High-efficiency Converter

      A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally, The high-frequency LLC resonant converter is completed.