進階篩選

Technical category
    • Application of inorganic nanofiber technology to promote the development of biotechnology

      Smart machinerynovel materials FutureTech Application of inorganic nanofiber technology to promote the development of biotechnology

      Inorganic porous nanofibers with surfaceinterface defects are prepared through humidity-controlled electrospinninghigh-temperature annealing technology. Under the irradiation of light sources of different wavelengths (380~780 nm), the bound electrons stored in the valence band can be excited to the conduction band to form free electrons on the surface of the material, generating different intensities of microcurrents, light sensitivitymicrocurrent changes. Because the "inorganic nanofiber" technology has high uniquenesshigh product compatibility, it can be applied to a wide range of markets.
    • (test)Application of inorganic nanofiber technology to promote the development of biotechnology

      Smart machinerynovel materials FutureTech (test)Application of inorganic nanofiber technology to promote the development of biotechnology

      Inorganic porous nanofibers with surfaceinterface defects are prepared through humidity-controlled electrospinninghigh-temperature annealing technology. Under the irradiation of light sources of different wavelengths (380~780 nm), the bound electrons stored in the valence band can be excited to the conduction band to form free electrons on the surface of the material, generating different intensities of microcurrents, light sensitivitymicrocurrent changes. Because the "inorganic nanofiber" technology has high uniquenesshigh product compatibility, it can be applied to a wide range of markets.
    • External Field-Free Spin-Orbit Torque Magnetic Random Access Memory

      AI & IOT Application FutureTech External Field-Free Spin-Orbit Torque Magnetic Random Access Memory

      STT-MRAM: scaling down (submicron scale) along with issues of magnetic propertyintegration with semiconductor processing. SOT-MRAM: fundamental understanding on mechanism, integration with STT-MRAMCMOS for readout. VCMA-MRAM: understand the mechanism behind the observable VCMA phenomenon, integration with other RAMs for write/read.