We proposedshowed the ferroelectric materials served as a prospective substrate to support TMD to achieve a pn homojunction, as the accumulationdepletion of an inevitably charged mobile carrier occurs in the TMD to screen the polarization field of the FE substrate. This work provides a non-volatile control of TMD dopinga promising way to produce a pn homojunction as a future building block of 2D device applications.

In recent years, the composite material made by combining materials have found ways to various applications including aviation, medicine, machinery,construction. In this study, we used a 2D composite material composed of a single-layer WSe2 semiconductorBiFeO3 to show that the electrical structure of the 2D material can be engineered without the addition of a metal electrode to achieve the effect of a diode. For the first time, it has been proved that the electronic structure of two-dimensional materials can be manipulated by the composite function of multiferroic materials.

We proposedshowed the ferroelectric materials served as a prospective substrate to support TMD to achieve a pn homojunction, as the accumulationdepletion of an inevitably charged mobile carrier occurs in the TMD to screen the polarization field of the FE substrate. This work provides a non-volatile control of TMD dopinga promising way to produce a pn homojunction as a future building block of 2D device applications.

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