Our technology uses GaN (gallium nitride)SiC (silicon carbide) wide band gap semiconductor materials to develop high radiation hardness semiconductor technologies for space applications.  GaNSiC-based materials feature with a strong bondingsmall lattice constant. Furthermore, the displacement energy of GaNSiC-based materials is greater than 10 times that of silicon. Therefore, GaNSiC-based device can exhibit a better radiation hardness than the Si-based devices, indicating that GaNSiC-based electronics are promising for the space applications.

1) The high voltage (1kV) GaN power MISHEMTs are developedno obvious degradation after 50kGy Gamma rays can be obtained.  2) for the first time in the world, GaN-based devices after 100kGy have been used for wireless power transfer (WPT) without performance degradation.  3) We have successfully demonstrated high voltage (3kV) SiC power MOSFETs with excellent radiation hardness against 700 kGy Gamma rays. The on-currentbreakdown voltage remain greater than 85 after irradiation. In contrast, commercial Si IGBT with the same voltage rating degrades drastically even at 1 kGy.

Our technology uses GaN/SiC wideband gap semiconductor to enhance the radiation stability. The developed radiation  hardened GaN/SiC-based semiconductor technologies can be widely used  for the applications in space, aviation, military, medical,nuclear-related equipment. Furthermore, due to the superior material propertiesthe device performance, GaN/SiC-based semiconductor technologies are also promising for the applications in B5G/6G communication, fast chargers for mobile devices, hybridelectric vehicles, power supplies,solar photovoltaics.

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