We propose advanced nitrogen-based passivation techniques, including plasma-enhanced atomic layer deposition (PEALD) aluminum nitride (AlN) and in-situ remote-plasma (RP) treatment using nitrogen (N2) gas, and demonstrate the high-performance and sufficiently reliable In0.53Ga0.47As FinFETs for radio frequency (RF) applications.

InGaAs materials are suitable for RF applications, enabling high-frequency and low-noise functionality. However, InGaAs FinFETs inherit low quality of InGaAs surface/interface of fin structures. in this work, we propose an advanced nitrogen-based plasma treatments and demonstrate high-performance InGaAs FinFET technology enabling the scaled devices matching the requirements of high-frequency RF applications.

These InGaAs FinFET technologies with high frequency response can be used for next-generation network systems, communications, and aerospace (with frequency signal between 100-340 GHz).  It can be integrate with the state-of-the-art Si CMOS used for many THz imaging applications such as medical diagnostic, health treatment, security, and sensor systems.