Summary |
The silicon layer doped oxide microparticles is placed behind the LSC. The layer can let light leaving the concentrator partially reflect or scatter back to the concentrator, which can improve the light-receiving efficiency of concentrators and increase the short-circuit currents of solar cells. The layer can also control the amount of light leaving concentrators, which can determine the brightness of rooms. The silicon layer doped oxide microparticles is not only simple in process, but also similar to the luminescent layer in the LSC process. It can be directly grown on the luminescent layer and increase the speed of manufacture. |
Scientific Breakthrough |
1.At present, the existing patent does not utilize the silicon layer doped oxide microparticles to improve the light-receiving efficiency of the LSC and increase the short-circuit current of the solar cell. Existing patents all use geometric shapes or mirrors or lenses to enhance the light guiding capabilities of the solar concentrators. 2.In the present technology, the microparticles of titanium dioxide, silicon dioxide, and aluminum oxide are each doped to the silicon layer for the process of the silicon layer doped oxide microparticles. Regardless of whether the silicon layer doped oxide microparticles is attached or coated under the luminescent layer, the different transmittances of the concentrators can be obtained by using different oxide doping amounts. The silicon layer doped oxide microparticles can also improve the light-receiving efficiency of the concentrator and increase the short-circuit current of the solar cell in the LSC. Therefore, if the modified LSC with the silicon layer doped oxide microparticles is applied to the glass windows of buildings, it not only can make the house have different amount of sunlight and brightness, but also can improve the light-receiving efficiency of the glass window and increase the short-circuit current of the solar cell in the modified LSC. 3.The silicon layer doped oxide microparticles is not only simple in process, but also similar to the luminescent layer in the LSC process. It can be directly grown on the luminescent layer and increase the speed of manufacture. The cost is relatively cheap due to the reduction of one substrate. 4.It is impossible to use the evaporation or sputtering method to grow the film on the low temperature resistant luminescent layer. And the present technology can make the silicon layer doped oxide microparticles grow on the low temperature resistant luminescent layer. |