成長於低阻SiC基板上之常關型p-GaN HEMT利用AlGaN cap層實現高閘極可靠度表現

Semiconductor device structuremethod for forming the same

Using ion selective sensor with sensitivity higher than ideal Nernst sensitivity detect heavy metal ion.

Negative capacitance field effect transistor with charged dielectric material

Trace

Technical Name	High Performance and High Uniformity p-GaN Gate Power Device on 6-inch SOI substrate Technology Development
Project Operator	Chang Gung University
Project Host	邱顯欽
Summary	We will propose a high device uniformity p-AlGaN gate normally-off power device will be proposed base on AlN etching stop layer design and this composited Schottky barrier layer design can overcome the p-AlGaN over etching problem. Moreover, the microwave annealing technique will also be adopted for this thin composited barrier layer and the Mg out diffusion can also be minimized for p- AlGaN gate.
Scientific Breakthrough	This major technology breakthrough was described as follows. (1)A high device uniformity p-AlGaN gate normally-off power device will be proposed base on AlN etching stop layer design epi structure. (2) The microwave annealing technique will also be adopted for this thin composited barrier layer and the Mg out diffusion can also be minimized for p- AlGaN gate.
Industrial Applicability	GaN HEMT devices are used in a wide range of Power design applications including PFC, Power supplies, DC/AC inverter, DC/DC converter, industry inverter, and any Power design application that requires a combination of low power lose and high frequency performance HEMTs. This technology can provide a high device uniformity normally-off GaN power device and high performance.
Keyword	p-AlGaN Composited Epi Structure Enhance-mode GaN Power device Low turn-on Voltage Power Diode Microwave Annealing Technology SOI Substrate Application High Power AlN Package Compound Semiconductor Logic Circuit Low Damage Etching method Digital Etching Technology