| Technical Name | Perovskite Infrared Light-Emitting Diodes | ||
|---|---|---|---|
| Project Operator | National Taiwan Normal University | ||
| Project Host | - | ||
| Summary | The present invention relates generally to a near-infrared light-emitting diode (LED)the method for manufacturing the same. When preparing the light-emitting layer of the near-infrared LED according to the present invention, the CsSnXX2′2 solution is coated on the substrate having the hole transport layer. Then, by a drying process, the solvent is moved awaythe CsSnXX2′solution is solidi |
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| Scientific Breakthrough | - |
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| Industrial Applicability | - |
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