InN growth posts a major difficulty in nitride based epitaxial growth. The lattice mismatchlow evaporation point of In make InN difficult to be grown in an Metal-organic chemical vapor deposition (MOCVD) system. In the past, most of the results are grown by molecular beam epitaxy. In our lab, we develop a systematic method in MOCVD system to grow high quality InN nanostructure, including dot-

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