Technical Name | First Demonstration of Negative Capacitance InGaAs MOSFETs with Sub-20 mV/dec Subthreshold Swing Using ALD-HfZrO x Ferroelectric Gate Stack | ||
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Project Operator | National Chiao Tung University | ||
Project Host | 胡正明 | ||
Summary | "In this work, we demonstrate a new concept for realizing high threshold voltage (V th ) E-mode GaN power devices with high maximum drain current (I D,max ). A gate stack ferroelectric blocking film with charge trap layer, achieved a large positive shift of V th . The E-mode GaN MIS-HEMTs with high V th of 6 V shows I D,max 720 mA/mm. The breakdown voltage is above 1100 V." |
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Scientific Breakthrough | "Negative capacitance InGaAs MOSFETs: Sub-20 mV/dec (SSrev=11 mV/dec) Small hysteresis (ΔVth = 0.7 V)" |
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Industrial Applicability | - |
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