In this work, we demonstrate a dual multiplication layers In0.52Al0.48As based avalanche photodiode, which is desired for ToF lidarFMCW lidar application due to its high performances in both Geiger modelinear mode operations. By combining the specially designed mesa shape with dual M-layer structure, we can achieve high single photon detection efficiencyneat temporal characteristic of 65ps . On the other hand, we can also achieve high gain-bandwidth product ,high saturation currenthigh photo-generated RF power under 0.9 Vbr at the same time.