This technology develop a “Thermoelectric Ever-Charge Portable Charger” for the applications in auxiliary charging of consumer electronicsfast self-charging for outdoor sensors. Technically, a sputtering depositiona semiconductor photolithography technique are combined to fabricate p-n materialsconnection procedures. The thermoelectric performance of the device is further optimized through a low-temperature heat treatment.

We grew p-GaN HEMT on a low-resistance SiC substrateadded a AlGaN cap layer above the p-GaN layer. We use the wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injectionachieve the purpose of improving the gate reliability. In addition, we chose a zero-degree anglelow-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost.