SS-MRAM is a superlattice based magnetoresistive RAM, in which the barrier is made of superlattice to replace crystal MgO (001). The superlattice is a high spin polarization artificial metamaterial, which is composed of stable insulatormetal materials. Compared with the current STT-MRAM, SS-MRAM has the advantages of low readingwriting power consumption, fast readingwriting speed, s

NSRRC, which is one of the worldwide top magnet related design teams, is capable of the magnetic field simulation, mechanism designmagnetic field measurement. Related technologies include electromagnet technology, permanent magnet technology, vacuum technology, low temperature technologysuperconductivity technology.

The present invention can be applied to many wearable devices. Its technologies include wireless signal transmission control systems, airbag pneumatic methods,airbag analogue variants. Its various system controls are designed to be modularized so that users can repairreplace them. Possible applications include VR AR wearable systems, unmanned vehicle control systemmedical rehabilitation system.

The present technology provides a method for diagnosing Alzheimer＇s disease, including the following steps: detecting a blood sample taken from a human subject suspected of having Alzheimer＇s disease,the biomarker level is selected from G72 protein level, SLC7A11 mRNA expression level,a combination of the two,compared with a preset standard, wherein if the detected biomarker level in the blood sample is higher than the preset standard, the Individual humans are thought to have Alzheimer＇s disease.

The Al-based web diagnostic system provides an online assessment tool for diagnosing schizophrenia. The Explainable Deep Neural Network classifier is deployed to analyze gray matterwhite matter to derive diagnostic classification of schizophrenia. The structural brain abnormalities associated with schizophrenia is visualized on the AI-based web diagnostic system at individual level.

STT-MRAM: scaling down (submicron scale) along with issues of magnetic propertyintegration with semiconductor processing. SOT-MRAM: fundamental understanding on mechanism, integration with STT-MRAMCMOS for readout. VCMA-MRAM: understand the mechanism behind the observable VCMA phenomenon, integration with other RAMs for write/read.