A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally, The high-frequency LLC resonant converter is completed.

Our technology uses GaN (gallium nitride)SiC (silicon carbide) wide band gap semiconductor materials to develop high radiation hardness semiconductor technologies for space applications. GaNSiC-based materials feature with a strong bondingsmall lattice constant. Furthermore, the displacement energy of GaNSiC-based materials is greater than 10 times that of silicon. Therefore, GaNSiC-based device can exhibit a better radiation hardness than the Si-based devices, indicating that GaNSiC-based electronics are promising for the space applications.

With rapid evolution of Moores lawsemiconductor technology nodes down to sub-10 nm, advanced devicematerial technologies capable of Å accuracy are highly demanded. Thus we developed atomic layer technologies including atomic layer deposition, atomic layer annealing, atomic layer epitaxy,atomic layer etching, etc. for extreme control of materialsstructures with Å precision.

The research topics include advanced power supply, energy storage techniques, electromechanical integration, electric vehicles,power system control. Based on the existing researchdevelopment foundation, focusing on energy conversion efficiency, high-voltage charging (fast charging), device miniaturizationlight weight, smart power management solutions, etc., with lightweight materials. Develop a power management solution to instantly monitor the power statuscharging device. The application of management to achieve the vision of a smart city.

The low-temperature defect passivation technology developed by our team can effectively eliminate defects in materials under 250°C, and leads to the improvement of the performance and reliability of devices. The technology has demonstrated the significant performance improvement when applying on GaN-based devices. After the treatment, the conducting current of FET devices is increased with the same operation condition. Moreover, in terms of LED devices, the emission efficiency was enhanced and the forward operating voltage decreased as well.

This invention presents a "next-generation augmented reality navigation system” using the generative adversarial network-long short term memory network (GAN-LSTM) framework with integrated GPS module to implement a novel AR navigation system. Unlike the presented AR navigation system, the virtual guided path is "autonomously generated" in captured image rather than superimpose on the image by using the pre-rendered 3D content, which not only provide a more authenticcorrect AR effect to user but also earlycorrectly guide the driver when driving in complex road traffic environment.

"Developed a ferroelectric oxide (HZO) gate for gallium nitride transistor, resulting in high breakdown, high current densityhigh threshold voltage. Best Figure of Merit Performance in the world. Using unique stepper double exposure technology to produce ultra-small linewidth GaN transistors for high-frequency application with Ft300GHz, one of the leading team in the world This technology uses frequency resonance, class E amplifiershigh-frequency rectifier circuits to achieve one-to-many non-contact fast charging. Best in the society for wireless fast chargingmodules."