進階篩選

Technical category
    • 電子式斷路器

      FutureTech 電子式斷路器

      "1. The modular design of a electric breaker is proposed. A prototype of a solid-state circuit with an input voltage of 500 Vadjustable rated current including 50 A, 100 A, 150 A200 A. 2. Achieved zero-current cutoff within 110 µs using the characteristics of IGBTs to detect the current value. 3. A12 bits analog/digital converter is used to achieve a higher accuracy current detection effect when compared with the conventional analog circuit. It can also detect the fault current rising ratecorrespond to different protection delay times according to the different fault current rising rate, so that the components in the solid-state breaker can withstand a lower fault current."
    • Range hood with wisdom sensing

      Smart machinerynovel materials Innotech Expo Range hood with wisdom sensing

      The smoke removal device with smart detection has the capability of gas detectionindoor air circulation. The system is internally equipped with a sensing device. If an abnormal PM2.5 valuea high concentration of dangerous gas is detected, the fan can be automatically activated immediately to quickly filter the air,both preventivemonitoring functions can be achieved.
    • Vehicle LiDAR using CMOS Single-photon Detectors

      Smart machinerynovel materials FutureTech Vehicle LiDAR using CMOS Single-photon Detectors

      This project is used for advanced driver assistance systems (ADAS)automatic driving. At present, our project will use a more sensitive CMOS single photon detector array to reduce the number of photons required for detection to less than ten, in order to break through the cost barriers of applications of LiDARestablish low-cost, high-performance LiDAR modules.
    • GaN Based High-frequency High-efficiency Converter

      Electronic & Optoelectronics FutureTech GaN Based High-frequency High-efficiency Converter

      A high power converter application built with GaN HEMT was presented. The technical aspects are developed from 6-inch wafers to converter applications, covering the optimization of 6-inch GaN epitaxial layers. The processdevice model of the 6-inch GaN E/D-mode component was established. Low-side GaN HEMT logic gates ( 2MHz) for integrated circuit were designed. Finally, The high-frequency LLC resonant converter is completed.
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