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    • 原子厚度的二維半導體元件

      FutureTech 原子厚度的二維半導體元件

      We proposedshowed the ferroelectric materials served as a prospective substrate to support TMD to achieve a pn homojunction, as the accumulationdepletion of an inevitably charged mobile carrier occurs in the TMD to screen the polarization field of the FE substrate. This work provides a non-volatile control of TMD dopinga promising way to produce a pn homojunction as a future building block of 2D device applications.
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