ULTRARAM™ is a revolutionary memory technology with the contradictory attributes of a universal memory: the non-volatility of flash, and a performance that is expected to exceed that of DRAM. It is ultra-efficient, with switching energies that are orders of magnitude lower than competing memory technologies, and has excellent endurance. This unprecedented combination of properties is achieved by exploiting quantum resonant tunneling using the 6.1-Å family of III-V compound semiconductors.