All-inorganic perovskite CsPbX3 (X = Cl, Br, I) quantum dots (QDs) due to its low-cost, narrow full width at half-maximum, high photoluminescence quantum yield, tunable emission wavelengths, and easy surface modification, which advantages have attracted widespread attention. This technique proposes to change the organic groups in the structure of perovskite QDs, the band gap energy and optoelectronic properties of the material will change accordingly, and pure natural materials are selected as organic precursors. CsPbBr3 QDs were synthesized by the hot injection method and the proprietary purification steps to improve the QDs quality and serve as the emission layer in QD-based light-emitting display. The pure natural material perovskite QDs have the following extraordinary characteristics: high fluorescence quantum efficiency, high color purity, easy processing properties, which can display more vivid colors in the display field.

The breakthrough of this technology lies in proposing pure natural materials doped with perovskite quantum dots, and modifying the surface of the quantum dots with an oxide-based purification solvent, thereby reducing surface defects and enhancing optical performance. At the same time, it can inhibit the invasion of water and oxygen on the surface of quantum dots and improve the stability and PL quantum yield of perovskite quantum dots. When made into the perovskite quantum dot LEDs, the light emission wavelength is 520 nm, and the brightness is 3200 cd m-2@6V.

The perovskite quantum dot materials have been well demonstrated to be potential functional components for photonic and optoelectronic applications, and are currently on the way to industrialization. Specifically, quantum dots can be employed as fluorescence labels, laser gain media, LED phosphors, and down‐shifting films for LCD backlights. They can also be processed into thin film for optoelectronic devices including solar cells, photodetectors, transistors, and LEDs