In order to meet the requirements of 3DIC technology demands, the AlN substrate process is chosen to be developed to solve the problems of leakage current, cross talk and heat concentration in package. The adoption of AlN substrate is helpful to raise the performance and reliability of high power device with miniaturization stacking.

Normally, silicon and glass is usually used as 3DIC interposer substrate material. However, Si substrate suffered the problems of leakage current and signal noise due to its worse electrical insulation, and Glass substrate suffered the severe problems of heat dissipating due to its worse thermal conductivity. In order to solve the above mentioned problems, we develop the AlN substrate material with high electrical insulation and thermal conductivity to meet the demands of 3DIC interposer substrate application.
The electrical connection between different interposer substrate by through via is an important issue in 3DIC technology development. With the trend of miniaturization, the development of AlN interposer substrate, with high electrical insulation, high thermal conductivity and high aspect ratio of via, can decrease the heat accumulation effect resulted from miniaturization. Also, it can lower the crosstalk between connections and then promote the electrical performance of device.
Our technology can be used in 3DIC interposer substrate, via filling, and metallization circuit application owing to the demands of device shrinkage and operating efficiency. In addition, this technology also can be used in AlN 3D LED package with the cooperation of Through AlN Via technology. The development of AlN 3D LED package can reduce the LED chip area and increase illuminance of single chip due to its capability of executing double side circuits process.

散熱基板、陶瓷構裝基板、3DIC中介層基板